Conversion of Direct to Indirect Bandgap and Optical Response of B Substituted InN for Novel Optical Devices Applications
Identifieur interne : 004546 ( Main/Repository ); précédent : 004545; suivant : 004547Conversion of Direct to Indirect Bandgap and Optical Response of B Substituted InN for Novel Optical Devices Applications
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Abstract
Optical properties of BxIn1-xN are calculated as a function of the varying concentration of Boron and Indium. Indium is gradually replaced by Boron and optical properties of the resulting materials are studied. The fractional concentration of Boron is increased gradually from x = 0 to x = 1 in steps of 0.25. The bandgap increases with the increasing Boron concentration, from 0.95 eV for pure InN to 5.6 eV for BN. A unique behavior of BN in zinc-blend phase is observed, that is, it shifts from indirect to direct bandgap semiconductor by the substitution of In on B sites. This behavior can be used to make novel and advanced optical devices. Frequency dependent reflectivity, absorption coefficient, and optical conductivity of BxIn1-xN are calculated and found to be the constituent's concentration dependent. The region of reflectivity, absorption coefficient and optical conductivity shifts from lower frequency into the higher frequency as the material goes from pure InN to pure BN.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Conversion of Direct to Indirect Bandgap and Optical Response of B Substituted InN for Novel Optical Devices Applications</title><author><name sortKey="Amin, Bin" uniqKey="Amin B">Bin Amin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Hazara University</s1><s2>Mansehra NWFP</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Mansehra NWFP</wicri:noRegion></affiliation></author><author><name sortKey="Ahmad, Iftikhar" uniqKey="Ahmad I">Iftikhar Ahmad</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Hazara University</s1><s2>Mansehra NWFP</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Mansehra NWFP</wicri:noRegion></affiliation></author><author><name sortKey="Maqbool, Muhammad" uniqKey="Maqbool M">Muhammad Maqbool</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics and Astronomy, Ball State University</s1><s2>Muncie, IN 47306</s2><s3>USA</s3><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Muncie, IN 47306</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0145544</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0145544 INIST</idno><idno type="RBID">Pascal:10-0145544</idno><idno type="wicri:Area/Main/Corpus">004843</idno><idno type="wicri:Area/Main/Repository">004546</idno></publicationStmt><seriesStmt><idno type="ISSN">0733-8724</idno><title level="j" type="abbreviated">J. lightwave technol.</title><title level="j" type="main">Journal of lightwave technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficient</term><term>Frequency dependence</term><term>Frequency shift</term><term>Optical characteristic</term><term>Optical material</term><term>Reflectance</term><term>Routing protocols</term><term>Transmission protocol</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique optique</term><term>Protocole routage</term><term>Dépendance fréquence</term><term>Facteur réflexion</term><term>Coefficient absorption</term><term>Déplacement fréquence</term><term>Matériau optique</term><term>Protocole transmission</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Optical properties of B<sub>x</sub>In<sub>1-x</sub>N are calculated as a function of the varying concentration of Boron and Indium. Indium is gradually replaced by Boron and optical properties of the resulting materials are studied. The fractional concentration of Boron is increased gradually from x = 0 to x = 1 in steps of 0.25. The bandgap increases with the increasing Boron concentration, from 0.95 eV for pure InN to 5.6 eV for BN. A unique behavior of BN in zinc-blend phase is observed, that is, it shifts from indirect to direct bandgap semiconductor by the substitution of In on B sites. This behavior can be used to make novel and advanced optical devices. Frequency dependent reflectivity, absorption coefficient, and optical conductivity of B<sub>x</sub>In<sub>1-x</sub>N are calculated and found to be the constituent's concentration dependent. The region of reflectivity, absorption coefficient and optical conductivity shifts from lower frequency into the higher frequency as the material goes from pure InN to pure BN.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0733-8724</s0></fA01><fA02 i1="01"><s0>JLTEDG</s0></fA02><fA03 i2="1"><s0>J. lightwave technol.</s0></fA03><fA05><s2>28</s2></fA05><fA06><s2>1-4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Conversion of Direct to Indirect Bandgap and Optical Response of B Substituted InN for Novel Optical Devices Applications</s1></fA08><fA11 i1="01" i2="1"><s1>AMIN (Bin)</s1></fA11><fA11 i1="02" i2="1"><s1>AHMAD (Iftikhar)</s1></fA11><fA11 i1="03" i2="1"><s1>MAQBOOL (Muhammad)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Hazara University</s1><s2>Mansehra NWFP</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics and Astronomy, Ball State University</s1><s2>Muncie, IN 47306</s2><s3>USA</s3><sZ>3 aut.</sZ></fA14><fA20><s1>223-227</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>20142</s2><s5>354000181605320280</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>27 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0145544</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of lightwave technology</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Optical properties of B<sub>x</sub>In<sub>1-x</sub>N are calculated as a function of the varying concentration of Boron and Indium. Indium is gradually replaced by Boron and optical properties of the resulting materials are studied. The fractional concentration of Boron is increased gradually from x = 0 to x = 1 in steps of 0.25. The bandgap increases with the increasing Boron concentration, from 0.95 eV for pure InN to 5.6 eV for BN. A unique behavior of BN in zinc-blend phase is observed, that is, it shifts from indirect to direct bandgap semiconductor by the substitution of In on B sites. This behavior can be used to make novel and advanced optical devices. Frequency dependent reflectivity, absorption coefficient, and optical conductivity of B<sub>x</sub>In<sub>1-x</sub>N are calculated and found to be the constituent's concentration dependent. The region of reflectivity, absorption coefficient and optical conductivity shifts from lower frequency into the higher frequency as the material goes from pure InN to pure BN.</s0></fC01><fC02 i1="01" i2="X"><s0>001D04B03A</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Caractéristique optique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Optical characteristic</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Característica óptica</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Protocole routage</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Routing protocols</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Dépendance fréquence</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Frequency dependence</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Facteur réflexion</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Reflectance</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Coeficiente reflexión</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Coefficient absorption</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Absorption coefficient</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Coeficiente absorción</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Déplacement fréquence</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Frequency shift</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Desplazamiento frecuencia</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Matériau optique</s0><s5>22</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Optical material</s0><s5>22</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Material óptico</s0><s5>22</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Protocole transmission</s0><s5>46</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Transmission protocol</s0><s5>46</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Protocolo transmisión</s0><s5>46</s5></fC03><fN21><s1>095</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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